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What is gallium-nitride? GAN, which is the third-generation of semiconductor materials after SIC and Diamond and the other semiconductor materials such as the first-generation GE, SI conductive materials and the second-generation GaaS, INP INP composite semiconductor substances, has been called. This material has strong radiation resistance, a large direct gap, strong atomic key and good chemical stability (almost none of the acid corrosion). This material has great potential in optoelectronics applications, as well as high-temperature and high power microwave equipment.

Material growth of gallium-nitride
For the growth of GaN, there must be a set temperature and an appropriate NH3 partial pressur. The most common methods are conventional MOCVD (including APMOCVD & LPMOCVD), Plasma-enhancedMOCVD(PE-MOCVD), electron cyclotron resonance assisted MBE. As a result, both the temperature required and the NH3 partial pressurized decrease. This project uses AP MOCVD equipment. Horizontal reactor, modified and designed specifically for this purpose. As source materials for the program, domestic high-purity TMGa, NH3 and NH3 and DeZn are used. (0001) Sapphire, (111) Silicon and high frequency induction heating are all used. Low-resistance silicon and high purity H2 are used to transport MO sources. As the regulator of the growth zone, use high-purity nitrogen2. The quality and properties of GaN were determined using HALL measurement, double-crystal diffraction, room temperature PL spectrum, and HALL measurement. There are two main problems to growing perfect GaN. There are two key problems to solve in order to make perfect GaN crystals. One, how to stop the strong parasitic reaction between NH3 & TMGa to allow the two reactants to be fully deposited onto sapphire or Si substrates. A variety of reactor types and airflow models were used to achieve this goal. Finally, an original reactor structure was developed. GaN was created on the substrate by changing the distance between TMGa and the substrate. The silicon base acts as a heating body, to keep NH3 from reacting at high temperatures and graphite. Conventional two-step growth methods are used for the second issue. A sapphire treated with high heat will create a GaN buffer at approximately 250A0 at 500, and then at 1050 it will become a flawless GaN single crystal material. To grow a GaN single-crystal on Si substrates, first the AlN buffer is grown at 1150, then the GaN crystal.

Galium nitride price
Price will depend on how large and pure the gallium nitride particles are. The purchase volume may also have an effect on the price. Large quantities of small amounts will result in a lower price. On our official website, you can see the price for gallium Nitride.

Gallium nitride supplier
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