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GaN is a semiconductor material of third generation with a large forbidden-band width. It has superior properties compared to first-generation Si or second-generation GaAs.
GaN devices, due to their high thermal conductivity and large band gaps, can operate at temperatures over 200 degC. This allows them to carry more energy and be more reliable. A larger forbidden band and dielectric break-down electric field can reduce the on resistance of the GaN device. This is good for improving the overall energy efficiency.

GaN semiconductors can therefore be designed to have a higher bandwidth, higher amplifying gain, higher energy efficiency and smaller size. These characteristics are consistent with "tonalities" in the semiconductor industry.

GaN is the perfect material for 5G. It's also used in the power amplifier at base stations. Gallium nitride, gallium arsenide and indium-phosphide are common semiconductor materials used in radio frequency applications.

GaN devices have better frequency characteristics than other high-frequency technologies such as indium phosphide and gallium arsenide. GaN devices must have a higher instantaneous bandwith. This can be achieved by using carrier aggregation, preparing higher frequency carriers and using carrier aggregation.

Gallium nitride can achieve higher power density than silicon or any other device. GaN has a higher power density. GaN's small size is an advantage when it comes to achieving a particular power level. Smaller devices can reduce device capacitance, allowing for the design of systems with higher bandwidth. Power Amplifiers (PA) are a critical component of RF circuits.

With the advent of 5G devices, GaAs will no longer be able to achieve high integration levels at high frequencies.

GaN will be the next hot topic. GaN, as a wide-bandgap semiconductor, can withstand greater operating voltages. This results in higher power density. It also means higher operating temperatures.

Qualcomm President Cristiano Amon said at the Qualcomm 5G/4G Summit that the first 5G smartphones will be available in the second half of 2019, and by the end Christmas and New Year. 5G is said to be 100 to 1000 times faster than the current 4G network, and will reach Gigabits/second.

As well as the increase in the number and density of basestations, there will be a significant increase in RF devices. As a result, the number of RF devices required in the 5G period will increase by dozens or even hundreds of times compared to 3G and the 4G periods. Therefore, cost control and silicon-based GaN have a major cost advantage. It is possible to achieve a market breakthrough using silicon-based GaN technologies.

Commercialization of any new semiconductor technology is difficult, and this can be seen in the evolution of the last two generations. GaN, which is also in this stage at the moment, will cost more to civilians because of the increased demand for silicon-based devices, the mass production and process innovations, etc.

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